Optical fundamental band-gap energy of semiconductors by photoacoustic spectroscopy
نویسندگان
چکیده
منابع مشابه
The optical response above the band gap of light emitting porous silicon, as investigated by photoacoustic spectroscopy
Photoacoustic Spectroscopy (PAS) has been performed on Porous Silicon Layers (PSL) obtained by chemical and electrochemical etching of crystalline Silicon. In the investigated energy range (2.0eV-4.7eV) the samples behave as optically opaque and show strong light scattering properties so to prevent the application of standard reflectivityftrasmission techniques. PAS proves suitable in studying ...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1994
ISSN: 1155-4339
DOI: 10.1051/jp4:1994731